sot-323 plastic-encapsulate transistors transistor (npn) features z excellent h fe linearity z maximum ratings ( t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 7 v i c collector current -continuous 150 ma p c collector power dissipation 200 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =50 a,i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma,i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =50 a,i c =0 7 v collector cut-off current i cbo v cb =60v,i e =0 0.1 a emitter cut-off current i ebo v eb =7v,i c =0 0.1 a dc current gain h fe(1) v ce =6v,i c =1ma 120 560 collector-emitter saturation voltage v ce(sat) i c =50ma,i b =5ma 0.4 v transition frequency f t v ce =12v,i c =2ma,f=30mhz 180 mhz collector output capacitance c ob v cb 12v,i e =0,f=1mhz 3.5 pf classification of h fe(1) rank q r s range 120-270 180-390 270-560 marking bq br bs sot-323 1. base 2. emitter 3. collector 2012- willas electronic corp. 2SC4081XT1
0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0.1 1 10 0.1 1 10 100 11 0 10 100 1000 1 10 100 10 100 1000 02468 0 3 6 9 12 0 25 50 75 100 125 150 0 50 100 150 200 250 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 0.1 1 10 100 0.01 0.1 1 base-emmiter voltage v be (v) collcetor current i c (ma) common emitter v ce =6v t a =25 t a =100 i c v be c ob c ib v cb / v eb c ob / c ib f=1mhz i e =0/i c =0 t a =25 capacitance c (pf) reverse voltage v (v) transition frequency f t (mhz) collector current i c (ma) v ce =12v t a =25 i c f t 50 typical characterisitics t a =100 t a =25 dc current gain h fe collector current i c (ma) common emitter v ce =6v i c h fe 0.5 150 40ua 36ua 32ua 28ua 24ua 20ua 16ua 12ua 8ua i b =4ua common emitter t a =25 collector-emitter voltage v ce (v) collector current i c (ma) static characteristic collector power dissipation p c (mw) ambient temperature t a ( ) p c t a collector current i c (ma) base-emitter saturation voltage v besat (v) t a =25 t a =100 =10 i c v besat 150 20 150 i c v cesat collector-emitter saturation voltage v cesat (v) collector current i c (ma) =10 t a =25 t a =100 150 2012- willas electronic corp. sot-323 plastic-encapsulate transistors 2SC4081XT1
outline drawing dimensions in inches and (millimeters) sot-323 rev.c 2012- willas electronic corp. sot-323 plastic-encapsulate transistors 2SC4081XT1 .056(1.40) .047(1.20) .096(2.45) .078(2.00) .004(0.10)min. .010(0.25) .003(0.08) .043(1.10) .032(0.80) .016(0.40) .008(0.20) .004(0.10)max. .087(2.20) .070(1.80) .054(1.35) .045(1.15)
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